PROFESSOR

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  • Research career
    Kyonggi University

    Professor   Sanghyun Ju

Professional / Research Experience
  • Ph.D. Purdue University, 2004-2007
  • Post Doc. Birck Nanotech. Center, 2007-2008
  • Engineer, Samsung SDI R&D center, 2000-2007
  • IEEE EDS, Committee Member, 2011-2014
  • Korea Physics Society, Committee Member, 2013-2014, 2017
Key Achievements
  • SCI Paper More than 100 (Nature Nanotechnology, Nano Letters, Advanced Materials, ACS Nano, Scientific Reports)
  • Patent More than 70 (United States, China, Korea)
  • Development of flexible and transparent nanowire-circuits 2007
  • Development of AMOLED display driven by nanowire transistors 2008
  • Venture business Nanotree Co. (Nanomaterials, Designated as excellent venture by Small and Medium Business Administration) CT Inovation Co. 2014 (Functional materials / Devices)
  • Technology Transfer White Fume Nanofilter(2015), Smart Shielder(2017), Nanoshielding FMM(2017)
  • Award for Excellence in Research, Kyonggi University (2011, 2012, 2013, 2015, 2016 )
  • Awards for Excellence in Research and Best Research Papers, Samsung (2001, 2001, 2002)
  • Developed the world’s first (5.4 inch and 15.1 inch) and largest (17 inch) AMOLED displays (Samsung Technology Award ~2 times)
Representative study

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Device physics: Nanowires’ display of potential

Low Operating Voltage Single ZnO Nanowire Field - EffectTran-sistors Enabled by Self-Assembled Organic Gate Nanodielectrics

Transparent Active Matrix Organic Light-Emitting Diode Displays Driven by Nanowire Transistor Circuitry

Faster all-optical switching, dynamic droplets, a refractometer on a chip, and more

Role of Self-Assembled Monolayer Passivation in Electrical Transport Properties and Flicker Noise of Nanowire Transistors

Control of Semiconducting and Metallic Indium Oxide Nanowires

Fully Transparent Pixel Circuits Driven by Random Network Carbon Nanotube Transistor Circuitry

Photostable Zn2SnO4 Nanowire Transistors for Transparent Displays

Control of Current Saturation and Threshold Voltage Shift in Indium Oxide Nanowire Transistors with Femtosecond Laser Annealing

Fully Transparent Thin-Film Transistors Based on Alibned Carbon Naontube Arrays and Indium Tin Oxide Electrodes